The IRF6617TR is a DirectFET™ power MOSFET from International Rectifier (now Infineon Technologies). It is optimized for synchronous rectification in DC-DC converters and other high-efficiency power conversion applications. The 'TR' suffix suggests it comes in tape and reel packaging.

Applications

• Synchronous Rectification: Used as a synchronous rectifier in DC-DC converters to improve efficiency.
• Point-of-Load (POL) Converters: Employed in POL converters for powering microprocessors and other digital ICs.
• Server Power Supplies: Found in server power supplies for efficient power conversion.
• Notebook Computers: Used in notebook computers for battery management and power distribution.
• Telecommunications Equipment: Employed in telecommunications equipment for efficient power conversion.

Features

• Vdss (Drain-Source Voltage): 20V
• Rds(on) (Drain-Source On-Resistance): Very low, typically around 4.5 mOhms at Vgs=4.5V
• Id (Continuous Drain Current): Typically 18A
• Qg (Total Gate Charge): Low gate charge for fast switching
• Package: DirectFET™ Small Can
• Logic Level Gate Drive: Optimized for low gate drive voltage
• Low Qgd (Gate-Drain Charge): Reduces switching losses.

Benefits

• High Efficiency: Extremely low on-resistance minimizes conduction losses, resulting in high efficiency.
• Fast Switching: Low gate charge enables efficient operation at high switching frequencies.
• Low Voltage Operation: Optimized for use in low-voltage systems.
• Compact Size: DirectFET™ package provides excellent thermal performance in a small footprint.
• Logic Level Compatible: Can be directly driven by logic-level signals.
• Improved Thermal Performance: DirectFET™ package provides direct heat transfer to the PCB.

Additional Details

The IRF6617TR MOSFET is designed for high-efficiency power conversion, particularly in synchronous rectification applications. Its extremely low on-resistance minimizes conduction losses, while its low gate charge enables fast switching speeds. The DirectFET™ package provides excellent thermal performance, allowing the device to dissipate heat effectively. The logic-level gate drive capability makes it easy to interface with microcontrollers and other logic devices. The low gate-drain charge (Qgd) reduces switching losses, further improving efficiency. This MOSFET is ideal for use in high-density power converters where efficiency and thermal management are critical. Consult the latest datasheet for up-to-date specifications and application notes.