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IRF7353D2QTRPBF

Part No IRF7353D2QTRPBF
Manufacturer International Rectifier
Catalog Misc Products
Sample
Rohs State rohs
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Categories Uncategorized
Manufacturer INTERNATIONAL RECTIFIER
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 826100-IRF7353D2QTRPBF
Ultra Librarian 3D Model Ultra Librarian IRF7353D2QTRPBF CAD Model

Description

The IRF7353D2QTRPBF is an automotive-qualified, dual N-channel MOSFET from International Rectifier (now Infineon Technologies). This device is specifically designed for high-efficiency power switching applications in automotive systems.

Applications:

  • Automotive Body Control Modules: Used for switching loads such as lights, motors, and solenoids.
  • Automotive Motor Control: Efficiently controls various motors in vehicles, such as window lifts and seat adjusters.
  • Automotive Power Distribution: Manages power distribution throughout the vehicle's electrical system.
  • Automotive Lighting Systems: Used in headlight and taillight control circuits.

Features:

  • AEC-Q101 Qualified: Suitable for use in automotive applications.
  • Dual N-Channel MOSFET: Integrates two MOSFETs into a single package.
  • Low On-Resistance (RDS(on)): Minimizes power losses during switching.
  • Logic-Level Gate Drive: Can be driven directly by logic-level signals.
  • Surface Mount Package: Allows for efficient PCB assembly.
  • Lead-Free, RoHS Compliant: Environmentally friendly.

Benefits:

  • High Efficiency: Low on-resistance reduces power dissipation and heat generation.
  • Space Saving: Dual MOSFET integration reduces board space requirements.
  • Simplified Circuit Design: Logic-level gate drive simplifies the driving circuitry.
  • Reliable Performance: AEC-Q101 qualification ensures reliability in automotive environments.
  • Environmentally Friendly: Lead-free and RoHS compliant design.

Additional Details:

The IRF7353D2QTRPBF is designed to operate in harsh automotive environments and offers excellent thermal performance. It is commonly used in applications where high efficiency and space saving are critical. This MOSFET features a low gate charge which contributes to efficient switching performance.

Technical Specifications:

  • VDS (Drain-Source Voltage): 30V
  • RDS(on) (On-Resistance): 0.022 Ohms (at VGS = 10V)
  • ID (Continuous Drain Current): 11A
  • Gate Threshold Voltage: 1V to 2.5V
  • Package: SO-8

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