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IRFZ34N

Part No IRFZ34N
Manufacturer International Rectifier
Description Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1188172-IRFZ34N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFZ34N CAD Model

Description

The IRFZ34N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from International Rectifier. It's designed for high-speed switching applications and is commonly used in power supplies, DC-DC converters, motor control, and other applications requiring efficient power control.

Applications:

  • DC-DC converters
  • Power supplies
  • Motor control
  • Inverters
  • Solid-state relays
  • Load switching

Features:

  • Advanced Process Technology: Provides high efficiency and reliability.
  • Dynamic dv/dt Rating: Ensures stable operation under rapidly changing voltage conditions.
  • 175°C Operating Temperature: Allows for use in high-temperature environments.
  • Fast Switching: Minimizes switching losses and improves overall system efficiency.
  • Avalanche Rated: Can withstand occasional avalanche breakdown events.
  • Lead-Free: RoHS compliant and environmentally friendly.

Benefits:

  • Improved System Efficiency: Reduces power losses in switching applications.
  • Increased Reliability: Provides stable and dependable performance over a wide range of operating conditions.
  • Simplified Thermal Management: Operates efficiently at higher temperatures, reducing the need for bulky heat sinks in some applications.
  • Faster Switching Speeds: Enables higher frequency operation and improved transient response.
  • Enhanced Ruggedness: Can withstand voltage spikes and transient events.

Additional Details:

The IRFZ34N has a drain-source voltage (Vdss) of 60V, a continuous drain current (Id) of 30A, and a pulsed drain current (Idm) of 110A. The gate-source voltage (Vgs) is ±20V. The on-resistance (Rds(on)) is typically 0.05 ohms at Vgs = 10V. The package is a TO-220AB through-hole package, making it easy to mount and heatsink. The threshold voltage (Vgs(th)) is typically 2 to 4 volts. This MOSFET is designed for applications where efficiency, speed, and reliability are critical factors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2076 $50.8620
515+ $0.1944 $100.1160
800+ $0.1879 $150.3200
1,145+ $0.1747 $200.0315
1,490+ $0.1682 $250.6180
1,860+ $0.1616 $300.5760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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