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Same model may have multiple batches, images only for reference.
IXBF12N300 Real Image
Same model may have multiple batches, images only for reference.

IXBF12N300

Part No IXBF12N300
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 3000V 26A 125W ISOPLUSI4 / IGBT 3000 V 26 A 125 W Through Hole ISOPLUS i4-PAC™
Datasheet
IXBF12N300 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
Voltage - Collector Emitter Breakdown (Max) 3000 V
Current - Collector (Ic) (Max) 26 A
Current - Collector Pulsed (Icm) 98 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 12A
Power - Max 125 W
Input Type Standard
Gate Charge 62 nC
Reverse Recovery Time (trr) 1.4 µs
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package i4-Pac™-5 (3 Leads)
Supplier Device Package ISOPLUS i4-PAC™
Base Product Number IXBF12
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1324421-IXBF12N300
Ultra Librarian 3D Model Ultra Librarian IXBF12N300 CAD Model

Description

The IXYS IXBF12N300 is a single IGBT transistor that has a collector-emitter breakdown voltage of 3000V and a maximum power of 125W.

  • Collector-Emitter Breakdown Voltage: 3000V
  • Maximum Power: 125W
  • Mounting Style: Through-Hole
  • Standard Package: 25
  • Reverse Recovery Time: 1.4 µs
  • Gate Charge: 62 nC
  • Voltage Gate-Source Threshold: 4.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Package: ISOPLUS i4-PAC™
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ROHS3 Compliant: Yes
  • ECCN: EAR99

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