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IXDN55N120D1

Part No IXDN55N120D1
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT 1200V 100A W/DIODE SOT-227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Status Active
IGBT Type NPT
Configuration Single
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 100A
Maximum Power Dissipation 450W
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 55A
Collector Cut-off Current(Max) 3.8mA
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package SOT-227B
Win Source Part Number 083268-IXDN55N120D1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXDN55N120D1 CAD Model

Description

The IXYS IXDN55N120D1 is a discrete semiconductor product that is a single configuration, NPT type IGBT with a maximum collector current of 100A and a collector-emitter breakdown voltage of 1200V.

  • Manufacturer: IXYS
  • Product Type: Discrete Semiconductor Product
  • IGBT Type: NPT type
  • Configuration: Single
  • Maximum Collector Current: 100A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Cut-Off Current: 3.8mA
  • Maximum Power Dissipation: 450W
  • Temperature Range: -40°C to 150°C
  • Package: SOT-227B case
  • Market Popularity: High
  • Component Status: Limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $257.7778 $257.7778
2+ $231.1112 $462.2224
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Availability: 1,000 pieces
Order Increment : 1 pcs
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