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Same model may have multiple batches, images only for reference.
IXEH25N120D1 Real Image
Same model may have multiple batches, images only for reference.

IXEH25N120D1

Part No IXEH25N120D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 36A 200W TO247AD / IGBT NPT 1200 V 36 A 200 W Through Hole TO-247AD
Datasheet
IXEH25N120D1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 36 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
Power - Max 200 W
Switching Energy 4.1mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 100 nC
Test Condition 600V, 20A, 68Ohm, 15V
Reverse Recovery Time (trr) 130 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247AD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324199-IXEH25N120D1
Ultra Librarian 3D Model Ultra Librarian IXEH25N120D1 CAD Model

Description

IXEH25N120D1 is an NPT IGBT transistor.

  • Breakdown Voltage: 1200 V
  • Maximum Collector Current: 36 A
  • Package: TO-247AD
  • Mounting Type: Through Holes
  • Maximum On-State Voltage: 3.2V @ 15V and 25A
  • Switching Energy: 4.1mJ (on) and 1.5mJ (off)
  • Gate Charge: 100 nC
  • Input Type: Standard
  • Maximum Power Dissipation: 200 W
  • Operating Temperature Range: -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99
  • Standard Package: 30 units

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