ON Semiconductor MMUN2217LT1G Bipolar Transistor

The MMUN2217LT1G from ON Semiconductor is a high-quality bipolar (BJT) transistor that offers a seamless blend of performance and reliability for a variety of electronic applications. This small-signal transistor is designed with meticulous attention to detail, ensuring stable and efficient operation in different circuit configurations.

Constructed with ON Semiconductor's innovative technologies, the MMUN2217LT1G features a PNP transistor configuration. This makes it suitable for amplification and switching applications where a negative polarity is required. The device comes in a compact SOT-23 surface-mount package, which is ideal for modern electronic devices where space is at a premium.

Key Specifications:

• Transistor Polarity: PNP
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 100 to 300 at 10mA
• Operating Temperature Range: -55°C to +150°C

With its robust voltage and current handling capabilities, the MMUN2217LT1G is a versatile component that can be integrated into a wide range of electronic circuits. Whether it's for signal amplification in audio devices, switching in power management systems, or as a part of a sensor interface, this transistor ensures consistent performance.

The MMUN2217LT1G also boasts a high DC current gain, which means it can amplify weak signals without significant power loss. This feature, combined with the low power dissipation, makes it an energy-efficient choice for battery-powered devices.

ON Semiconductor's commitment to quality is evident in the MMUN2217LT1G, making it a reliable choice for manufacturers and hobbyists alike. Its operating temperature range assures functionality in diverse environments, from industrial settings to consumer electronics. When it comes to incorporating a dependable PNP transistor in your design, the MMUN2217LT1G is an excellent option that balances performance with compactness and energy efficiency.