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Same model may have multiple batches, images only for reference.
SI7214DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7214DN-T1-GE3

Part No SI7214DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.6A 1212-8
Datasheet
SI7214DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 40 mOhm @ 6.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.5nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 064552-SI7214DN-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7214DN-T1-GE3 CAD Model

Description

The Vishay SI7214DN-T1-GE3 is a 2 N-Channel Dual FET with Logic Level Gate feature, designed for use in Discrete Semiconductor Products.

  • Manufacturer: Vishay
  • FET Type: 2 N-Channel Dual
  • Gate Feature: Logic Level Gate
  • Application: Discrete Semiconductor Products
  • Case/Package: PowerPAK 1212-8 Dual
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 4.6A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 6.5nC @ 4.5V
  • Maximum Rds On (Id,Vgs): 40 mOhm @ 6.4A, 10V
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
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Availability: 32,990 pieces
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