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IXFN27N80Q

Part No IXFN27N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 27A SOT-227B / N-Channel 800 V 27A (Tc) 520W (Tc) Chassis Mount SOT-227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN27
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1323872-IXFN27N80Q
Ultra Librarian 3D Model Ultra Librarian IXFN27N80Q CAD Model

Description

The IXFN27N80Q from IXYS is an N-Channel MOSFET designed for use in discrete semiconductor products like transistors and FETs.

  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id): 27A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
  • Package Type: SOT-227B
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • MSL level: 1 (Unlimited)
  • Product is ROHS3 compliant: true

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.5240 $64.5240
3+ $52.9427 $158.8281
4+ $51.2882 $205.1528
5+ $49.6338 $248.1690
7+ $47.9793 $335.8551
9+ $43.0159 $387.1431
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
Order Increment : 1 pcs
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