The IXFQ50N60X is a high-performance N-channel MOSFET with a drain-to-source voltage of 600V and a continuous drain current of 50A @ 25°C.

• On-Resistance: 73mOhm @ 25A and 10V gate-to-source voltage
• Gate Threshold Voltage: 4.5V @ 4mA
• Power Dissipation: 660W @ a case temperature of 25°C
• Mounting Type: Through-Hole
• Package: TO-3P-3
• Manufacturer: IXYS
• Series: HiPerFET™ and Ultra X series
• Gate Charge: 116nC @ 10V gate-to-source voltage
• Input Capacitance: 4660pF @ 25V drain-to-source voltage
• Maximum Gate-to-Source Voltage: ±30V
• Operating Temperature Range: -55°C to 150°C
• HTSUS Code: 8541.29.0095