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Same model may have multiple batches, images only for reference.
IXGH32N60BD1 Real Image
Same model may have multiple batches, images only for reference.

IXGH32N60BD1

Part No IXGH32N60BD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 200W TO247AD
Datasheet
IXGH32N60BD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 32A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 600μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 25ns/100ns
Testing Conditions 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049610-IXGH32N60BD1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH32N60BD1 CAD Model

Description

The IXYS IXGH32N60BD1 is a through-hole mounting IGBT transistor with a collector-emitter breakdown voltage of 600V and a maximum current collector of 60A.

  • Mounting Type: Through-Hole
  • Transistor Type: IGBT
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 60A
  • Maximum Power Dissipation: 200W
  • Pulsed Collector Current: 120A
  • Reverse Recovery Time: 25ns
  • Gate Charge: 110nC
  • Input Type: Standard
  • Package: TO-247AD (IXGH)
  • Collector-Emitter Saturation Voltage: 2.3V @ 15V and 32A
  • Total Switching Energy (Ets): 600μJ (off)
  • Turn-On/Off Delay Time: 25ns/100ns
  • Product Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Product Category: Discrete Semiconductor Products
  • Popularity: Medium

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