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Same model may have multiple batches, images only for reference.
IXSK35N120BD1 Real Image
Same model may have multiple batches, images only for reference.

IXSK35N120BD1

Part No IXSK35N120BD1
Manufacturer IXYS
Catalog IGBTs - Single
Description HIGH VOLTAGE IGBT WITH DIODE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) @ Vge, Ic 3.6V @ 15V, 35A
Power - Max 300W
Switching Energy 5mJ (off)
Input Type Standard
Gate Charge 120nC
Td (on/off) @ 25°C 36ns/160ns
Test Condition 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264AA(IXSK)
Win Source Part Number 1191225-IXSK35N120BD1
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXSK35N120BD1
Introduction Date August 10, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXSK35N120BD1 CAD Model

Description

It is an IGBT type PT with a current collector (Ic) of 70A and a voltage collector-emitter breakdown (maximum) of 1200V. The IXSK35N120BD1 has a power-maximum of 300W and a reverse recovery time (trr) of 40ns.

  • Package: TO-264-3, TO-264AA
  • Mounting Style: Through-hole
  • Suitable for: Various applications such as motor control, power supplies, and welding equipment.

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