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IXTH6N150

Part No IXTH6N150
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 6A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1500V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 2230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049825-IXTH6N150
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH6N150 CAD Model

Description

Its supply and demand status is limited.

  • Manufacturer: IXYS
  • Win Source Part Number: 1049825-IXTH6N150
  • Component Type: through hole
  • Drain-Source Breakdown Voltage: 1500V
  • Continuous Drain Current @ 25°C: 6A (Tc)
  • Maximum Rds On @ Id,Vgs: 3.5 Ohm @ 500mA, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 2230pF @ 25V
  • Use: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.2733 $53.0932
10+ $10.8909 $108.9090
15+ $10.5506 $158.2590
20+ $10.2102 $204.2040
26+ $9.8699 $256.6174
34+ $8.8489 $300.8626
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,320 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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