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Same model may have multiple batches, images only for reference.
IXTH76P10T Real Image
Same model may have multiple batches, images only for reference.

IXTH76P10T

Part No IXTH76P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 76A TO-247
Datasheet
IXTH76P10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 197nC @ 10V
Max Input Capacitance 13700pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 298W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049835-IXTH76P10T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXTH76P10T CAD Model

Description

The IXTH76P10T is a P-Channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 298W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 76A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±15V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 500mA, 10V
  • Package: TO-247-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: power supplies, motor control, and inverters
  • Packaging: Tube/Rail
  • Quantity per package: 30

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