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IXTK160N20

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Part No	IXTK160N20
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 160A TO264 / N-Channel 200 V 160A (Tc) 730W (Tc) Through Hole TO-264 (IXTK)
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	MegaMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	415 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12900 pF @ 25 V
Power Dissipation (Max)	730W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 (IXTK)
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXTK160
Standard Package	25
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346737-IXTK160N20
Ultra Librarian 3D Model	Ultra Librarian IXTK160N20 CAD Model

Description

The IXTK160N20 is a N-channel MOSFET transistor from IXYS.

Drain to Source Voltage: 200V
Power Dissipation: 730W (Tc)
FET Type: N-Channel
Vgs (Max): ±20V
Current - Continuous Drain (Id): 160A (Tc)
Rds On (Max): 13mOhm @ 500mA, 10V
Package: TO-264-3, TO-264AA
Temperature Range: -55°C ~ 150°C (TJ)

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