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Same model may have multiple batches, images only for reference.
IXTP180N085T Real Image
Same model may have multiple batches, images only for reference.

IXTP180N085T

Part No IXTP180N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 180A TO-220
Datasheet
IXTP180N085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 430W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049870-IXTP180N085T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP180N085T CAD Model

Description

The IXYS N-channel power MOSFET is a high-performance device designed for use in a wide range of electronic applications.

  • Power Dissipation (Max): 430W (Tc)
  • Application: Discrete semiconductor products
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 85V
  • Continuous Drain Current: 180A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Rds On (Max): 5.5 mOhm @ 25A, 10V
  • Package: TO-220AB
  • Mounting: Through Hole

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