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NTP60N06LG

Part No NTP60N06LG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 60A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 65nC @ 5V
Max Input Capacitance 3075pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 2.4W (Ta), 150W (Tj)
Maximum Rds On at Id,Vgs 16 mOhm @ 30A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083985-NTP60N06LG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTP60N06LG CAD Model

Description

ON Semiconductor NTP60N06LG Overview

The NTP60N06LG is a high-performance, N-Channel Power MOSFET produced by ON Semiconductor, renowned for its efficiency and reliability in a wide range of applications. This MOSFET utilizes leading-edge technology to achieve low on-resistance and to ensure minimal power loss during operation.

Key Features

  • Low On-Resistance: The NTP60N06LG boasts a low on-resistance, which is a critical feature for reducing conduction losses and improving overall efficiency.
  • High Current Capability: With a continuous drain current of 60A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive tasks.
  • Robust Thermal Performance: The device is designed to operate reliably over a wide temperature range, ensuring performance stability under varying environmental conditions.
  • Logic Level Gate Drive: This feature allows the MOSFET to be driven directly from microcontrollers or other logic devices, simplifying the design and reducing component count.

Applications

The versatility of the NTP60N06LG allows it to be used in a variety of applications, including:

  • Switching regulators
  • Power management systems
  • Motor control circuits
  • Automotive applications
  • DC-DC converters

Electrical Characteristics

Some of the key electrical characteristics of the NTP60N06LG include a drain-to-source voltage (V<sub>DS) of 60V, gate-to-source voltage (V<sub>GS) of ±20V, and a maximum drain current (I<sub>D) of 60A. The device also features a low threshold voltage, which ensures that it can be activated at lower voltages, enhancing its compatibility with various control circuits.

Package and Quality

The NTP60N06LG comes in a TO-220 package, which is widely used in the industry due to its ease of mounting and good thermal and electrical characteristics. ON Semiconductor's commitment to quality ensures that each MOSFET meets rigorous standards, providing designers with a dependable component for their electronic designs.

With its robust design and superior performance, the NTP60N06LG from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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