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Same model may have multiple batches, images only for reference.
IXTP8N50P Real Image
Same model may have multiple batches, images only for reference.

IXTP8N50P

Part No IXTP8N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO-220 / Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB
Datasheet
IXTP8N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1050pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 800 mOhm @ 4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 777662-IXTP8N50P
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP 8N50P
Introduction Date May 13, 2006
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXTP8N50P CAD Model

Description

The IXYS IXTP8N50P is a PolarHV series MOSFET manufactured by IXYS.

  • Power Dissipation (Tc): 150W
  • Gate-Source Voltage (Maximum): ±30V
  • Package: TO-220-3
  • Mounting Style: Through-hole
  • Input Capacitance (Maximum) @ 25V: 1050pF
  • Gate Charge (Maximum) @ 10V: 20nC
  • Rds On (Maximum) @ Id, Vgs: 800 mOhm @ 4A, 10V

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