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IXTQ64N25P

Name: IXTQ64N25P
Brand: IXYS
SKU: 465167
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTQ64N25P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 250V 64A TO-3P
Datasheet	IXTQ64N25P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	250V
Continuous Drain Current at 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 250μA
Max Gate Charge	105nC @ 10V
Max Input Capacitance	3450pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	400W (Tc)
Maximum Rds On at Id,Vgs	49 mOhm @ 500mA, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-3P
Dimension	TO-3P-3, SC-65-3
Win Source Part Number	1049940-IXTQ64N25P
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IXTQ64N25P CAD Model

Description

IXYS MOSFET IXTQ64N25P is a through-hole mounting N-Channel polarity semiconductor device.

Manufacturer: IXYS
Mounting: Through-hole
Channel Polarity: N-Channel
Maximum Power Dissipation: 400W (Tc)
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current @ 25°C: 64A (Tc)
Maximum Rds On @ Id,Vgs: 49 mOhm @ 500mA, 10V
Maximum Gate-Source Voltage: ±20V
Maximum Gate Charge: 105nC @ 10V
Maximum Input Capacitance: 3450pF @ 25V
Gate-Source Threshold Voltage: 5V @ 250μA
Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
3+	$22.5390	$67.6170
6+	$18.4935	$110.9610
9+	$17.9156	$161.2404
12+	$17.3377	$208.0524
15+	$16.7598	$251.3970
20+	$15.0260	$300.5200

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 22,600 pieces

MOQ: 3 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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