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Same model may have multiple batches, images only for reference.
IXTR90P10P Real Image
Same model may have multiple batches, images only for reference.

IXTR90P10P

Part No IXTR90P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 57A ISOPLUS247 / P-Channel 100 V 57A (Tc) 190W (Tc) Through Hole ISOPLUS247™
Datasheet
IXTR90P10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXTR90
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346766-IXTR90P10P
Ultra Librarian 3D Model Ultra Librarian IXTR90P10P CAD Model

Description

IXTR90P10P is a P-Channel MOSFET transistor from the PolarP™ series of IXYS.

  • FET Type: MOSFET
  • Channel Type: P-Channel
  • Series: PolarP™
  • Drain to Source Voltage: 100 V
  • Power Dissipation: 190W (Tc)
  • Package Type: TO-247-3
  • Mounting Type: Through Hole
  • FET Feature: -
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • Current: 57A (Tc)
  • Rds On: 27mOhm @ 45A, 10V
  • Vgs(th): 4V @ 250μA
  • Gate Charge (Qg): 120 nC @ 10 V
  • Input Capacitance (Ciss): 5800 pF @ 25 V

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