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IXTT360N055T2

Name: IXTT360N055T2
Brand: IXYS
SKU: 1341233
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXTT360N055T2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 360A TO268 / N-Channel 55 V 360A (Tc) 935W (Tc) Surface Mount TO-268AA
Datasheet	IXTT360N055T2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	TrenchT2™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	360A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 25 V
Power Dissipation (Max)	935W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268AA
Package / Case	TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number	IXTT360
Standard Package	30
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1341233-IXTT360N055T2
Ultra Librarian 3D Model	Ultra Librarian IXTT360N055T2 CAD Model

Alternative Products

Description

The IXTT360N055T2 is a N-Channel MOSFET (Metal Oxide) transistor from IXYS's TrenchT2™ series.

FET Type: N-Channel MOSFET
Technology: MOSFET (Metal Oxide)
Series: TrenchT2™
Voltage - Drain to Source (Vdss): 55 V
Power Dissipation (Max): 935W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V

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