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IXTT60N20L2

Part No IXTT60N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 60A TO268 / N-Channel 200 V 60A (Tc) 540W (Tc) Surface Mount TO-268AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT60
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346793-IXTT60N20L2
Ultra Librarian 3D Model Ultra Librarian IXTT60N20L2 CAD Model

Description

IXYS provides a N-Channel MOSFET transistor with a drain to source voltage of 200V.

  • Drain to Source Voltage: 200V
  • Power Dissipation: 540W (Tc)
  • Continuous Drain Current: 60A (Tc) @ 25℃
  • Maximum Rds On: 45mOhm @ 30A and 10V
  • Gate Charge: 255 nC @ 10V
  • Input Capacitance: 10500 pF @ 25V
  • Junction Temperature Range: -55℃ to 150℃
  • Package: TO-268-3, D2Pak (2 Leads + Tab), TO-268AA package
  • Package Type: Tube

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $26.2702 $52.5404
5+ $21.5551 $107.7755
8+ $20.8815 $167.0520
10+ $20.2079 $202.0790
13+ $19.5343 $253.9459
18+ $17.5135 $315.2430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,899 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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