The ON Semiconductor FDZ661PZ is a high-performance P-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This compact and robust component is part of ON Semiconductor's commitment to providing energy-efficient solutions that meet the needs of modern electronic devices.

Key Features

• Low On-Resistance: The FDZ661PZ offers an exceptionally low on-resistance (R<sub>DS(on)) of just 8.5 mΩ at V<sub>GS = -4.5 V, which enhances overall efficiency by minimizing power loss during operation.
• PowerTrench® Technology: Utilizing ON Semiconductor's proprietary PowerTrench® process, this MOSFET achieves optimal power density and a reduced footprint, making it ideal for space-constrained applications.
• High Power and Current Handling: With a maximum continuous drain current (I<sub>D) of -3.4 A and a power dissipation of 1.4 W, the FDZ661PZ is capable of handling significant power requirements.
• Low Profile: The ultra-thin MicroFET 2x2 package ensures a low-profile solution that is suitable for slim and compact electronic designs.
• Lead-Free and RoHS Compliant: This product is lead-free and meets RoHS environmental standards, reflecting ON Semiconductor's commitment to environmental sustainability.

Applications

The FDZ661PZ is versatile and can be used in various applications, including:

• Power management for portable devices such as smartphones and tablets
• DC/DC conversion in distributed power systems
• Load switching in battery management systems
• Power amplification stages in audio devices

Technical Specifications

Overall, the ON Semiconductor FDZ661PZ P-Channel PowerTrench® MOSFET is an excellent choice for designers looking for a high-efficiency, space-saving power component that does not compromise on performance.