FDZ661PZ

Part No FDZ661PZ
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.6A 4WLCSP / P-Channel 20 V 2.6A (Ta) 1.3W (Ta) Surface Mount 4-WLCSP (0.8x0.8)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 140mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 10 V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-WLCSP (0.8x0.8)
Package / Case 4-XFBGA, WLCSP
Base Product Number FDZ661
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FDZ661PZDKR,ONSONSFDZ661PZ,FDZ661PZTR,2156-FDZ661PZ-OS,FDZ661PZCT,FDZ661PZ-ND
Standard Package 5,000
Win Source Part Number 1059023-FDZ661PZ
Win Source Part Number SI5935CDC-T1-E3;  FDZ663P; FDFMA2P859T; FDFMA2P853;  DMG2301U-7;  USB10H;  

Description

The ON Semiconductor FDZ661PZ is a high-performance P-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This compact and robust component is part of ON Semiconductor's commitment to providing energy-efficient solutions that meet the needs of modern electronic devices.

Key Features

  • Low On-Resistance: The FDZ661PZ offers an exceptionally low on-resistance (RDS(on)) of just 8.5 mΩ at VGS = -4.5 V, which enhances overall efficiency by minimizing power loss during operation.
  • PowerTrench® Technology: Utilizing ON Semiconductor's proprietary PowerTrench® process, this MOSFET achieves optimal power density and a reduced footprint, making it ideal for space-constrained applications.
  • High Power and Current Handling: With a maximum continuous drain current (ID) of -3.4 A and a power dissipation of 1.4 W, the FDZ661PZ is capable of handling significant power requirements.
  • Low Profile: The ultra-thin MicroFET 2x2 package ensures a low-profile solution that is suitable for slim and compact electronic designs.
  • Lead-Free and RoHS Compliant: This product is lead-free and meets RoHS environmental standards, reflecting ON Semiconductor's commitment to environmental sustainability.

Applications

The FDZ661PZ is versatile and can be used in various applications, including:

  • Power management for portable devices such as smartphones and tablets
  • DC/DC conversion in distributed power systems
  • Load switching in battery management systems
  • Power amplification stages in audio devices

Technical Specifications

Parameter Value
VDS (Drain-Source Voltage) -20 V
VGS (Gate-Source Voltage) ±8 V
ID (Continuous Drain Current) -3.4 A
RDS(on) (On-Resistance) 8.5 mΩ
Package MicroFET 2x2

Overall, the ON Semiconductor FDZ661PZ P-Channel PowerTrench® MOSFET is an excellent choice for designers looking for a high-efficiency, space-saving power component that does not compromise on performance.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
65+ $0.7853 $51.0445
140+ $0.7347 $102.8580
215+ $0.7094 $152.5210
305+ $0.6587 $200.9035
395+ $0.6334 $250.1930
495+ $0.6080 $300.9600
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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