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Same model may have multiple batches, images only for reference.
IXTV102N20T Real Image
Same model may have multiple batches, images only for reference.

IXTV102N20T

Part No IXTV102N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 102A PLUS220 / N-Channel 200 V 102A (Tc) 750W (Tc) Through Hole PLUS220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
Power Dissipation (Max) 750W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV102
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346689-IXTV102N20T
Ultra Librarian 3D Model Ultra Librarian IXTV102N20T CAD Model

Description

The IXYS 1346689-IXTV102N20T is a N-channel MOSFET transistor. 1346689-IXTV102N20T IXYS.

  • Maximum Drain to Source Voltage: 200V
  • Continuous Drain Current: 102A
  • Rds On Resistance: 23mOhm @ 500mA and 10V
  • Maximum Power Dissipation: 750W @ Tc
  • Device Type: Through-hole
  • Package: TO-220-3, Short Tab
  • Gate Charge: 114 nC @ 10V
  • Input Capacitance: 6800 pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Series: TrenchHV™
  • Status: Obsolete

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