The IXYS IXTY02N120P is a high-performance N-channel MOSFET transistor with a drain-source breakdown voltage of 1200V and a continuous drain current of 200mA. It features a low on-state resistance of 75Ohm maximum and a gate-source voltage of ±20V. The transistor is packaged in a TO-252, (D-Pak) supplier device package and can be mounted using surface mount technology. It is suitable for use in various discrete semiconductor product applications.