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IXTY1R6N50P

Part No IXTY1R6N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 25μA
Max Gate Charge 3.9nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 6.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049975-IXTY1R6N50P
Popularity Medium
Supply and Demand Status Balance
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian IXTY1R6N50P CAD Model

Description

The IXTY1R6N50P is an electronic component manufactured by IXYS.

  • Category: Discrete Semiconductor Products
  • Technology: MOSFET
  • Polarity: N-Channel
  • Packaging: Tube/Rail
  • Mounting Style: SMD (SMT)
  • Win Source Part Number: 1049975-IXTY1R6N50P
  • Supply and Demand Status: balanced
  • Quantity per Package: 70
  • Power Dissipation (Max): 43W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case/Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 1.6A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 25μA
  • Max Gate Charge: 3.9nC @ 10V
  • Max Input Capacitance: 140pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 6.5 Ohm @ 500mA, 10V

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