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2SC1815-O

Part No 2SC1815-O
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description NPN Silicon Epitaxial Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Micro Commercial Co
Win Source Part Number 1125143-2SC1815-O
Manufacturer Homepage www.mccsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC1815-O CAD Model

Description

The 2SC1815-O is a general-purpose silicon NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). It is widely used in a variety of electronic applications due to its good gain, low noise, and high frequency characteristics. The "-O" suffix likely refers to a specific gain ranking.

Applications

  • Audio Amplification: Commonly used in pre-amplifiers and amplifier stages due to its low noise characteristics.
  • Switching Circuits: Used as a switch in low-power switching applications.
  • Oscillator Circuits: Can be used in oscillator circuits due to its high-frequency capability.
  • General-Purpose Amplification: Suitable for various signal amplification tasks.

Features

  • NPN Silicon Bipolar Transistor: Specifies the transistor type and material.
  • Low Noise Figure: Suitable for sensitive audio applications.
  • High Current Gain (hFE): Provides good amplification capabilities.
  • High Transition Frequency (fT): Enables use in high-frequency circuits.
  • Small Signal Amplifier: Designed for amplifying small signals without significant distortion.

Benefits

  • Improved Audio Quality: Low noise performance ensures clear audio amplification.
  • Efficient Switching: Fast switching speed allows for efficient operation in switching circuits.
  • Versatile Application: Suitable for a wide range of electronic applications.
  • Stable Performance: Provides reliable and consistent performance.

Additional Details

Absolute Maximum Ratings:

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 150mA
  • Collector Power Dissipation (PC): 400mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55 to +150°C

Electrical Characteristics (at Ta = 25°C):

  • Collector Cutoff Current (ICBO): 0.1µA (max)
  • Emitter Cutoff Current (IEBO): 0.1µA (max)
  • DC Current Gain (hFE): 200-400 (for O rank, at VCE = 6V, IC = 2mA)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.25V (max) (at IC = 10mA, IB = 1mA)
  • Transition Frequency (fT): 80 MHz (typ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8688 $65.4080
80+ $1.5338 $122.7040
120+ $1.4865 $178.3800
165+ $1.4380 $237.2700
210+ $1.3906 $292.0260
280+ $1.2462 $348.9360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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