The 2SC1815-O is a general-purpose silicon NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). It is widely used in a variety of electronic applications due to its good gain, low noise, and high frequency characteristics. The "-O" suffix likely refers to a specific gain ranking.
Applications
- Audio Amplification: Commonly used in pre-amplifiers and amplifier stages due to its low noise characteristics.
- Switching Circuits: Used as a switch in low-power switching applications.
- Oscillator Circuits: Can be used in oscillator circuits due to its high-frequency capability.
- General-Purpose Amplification: Suitable for various signal amplification tasks.
Features
- NPN Silicon Bipolar Transistor: Specifies the transistor type and material.
- Low Noise Figure: Suitable for sensitive audio applications.
- High Current Gain (hFE): Provides good amplification capabilities.
- High Transition Frequency (fT): Enables use in high-frequency circuits.
- Small Signal Amplifier: Designed for amplifying small signals without significant distortion.
Benefits
- Improved Audio Quality: Low noise performance ensures clear audio amplification.
- Efficient Switching: Fast switching speed allows for efficient operation in switching circuits.
- Versatile Application: Suitable for a wide range of electronic applications.
- Stable Performance: Provides reliable and consistent performance.
Additional Details
Absolute Maximum Ratings:
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 150mA
- Collector Power Dissipation (PC): 400mW
- Junction Temperature (Tj): 150°C
- Storage Temperature (Tstg): -55 to +150°C
Electrical Characteristics (at Ta = 25°C):
- Collector Cutoff Current (ICBO): 0.1µA (max)
- Emitter Cutoff Current (IEBO): 0.1µA (max)
- DC Current Gain (hFE): 200-400 (for O rank, at VCE = 6V, IC = 2mA)
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.25V (max) (at IC = 10mA, IB = 1mA)
- Transition Frequency (fT): 80 MHz (typ)