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2N2609

Part No 2N2609
Manufacturer Microchip Technology
Catalog JFETs (Junction Field Effect)
Description JFET P-CH 30V 10MA TO18
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - JFETs
Mfr Microchip Technology
Package Bag
Product Status Active
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 5 V
Current Drain (Id) - Max 10 mA
Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 A
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 5V
Power - Max 300 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Base Product Number 2N2609
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 10073-2N2609
Ultra Librarian 3D Model Ultra Librarian 2N2609 CAD Model

Description

The 2N2609 from Microchip Technology is a high-quality, versatile PNP bipolar junction transistor (BJT) designed to meet the needs of a wide range of electronic applications. This semiconductor device is well-suited for amplification and switching purposes, making it an ideal choice for both commercial and industrial uses.

With its robust construction, the 2N2609 offers reliable performance and is capable of handling moderate power levels. It is characterized by a fast switching speed and a low saturation voltage, which ensures efficiency in operation. This transistor is commonly used in signal processing, audio amplifiers, and as a switch in various circuits.

The 2N2609 features a TO-18 metal can package, which not only provides a compact form factor but also offers excellent thermal properties for better heat dissipation. This packaging is also known for its durability and resistance to physical stress, making the 2N2609 a reliable component in environments where mechanical robustness is required.

Key specifications of the 2N2609 include:

  • Collector-Emitter Voltage (VCEO): Providing a good balance between breakdown voltage and power handling.
  • Collector-Base Voltage (VCBO): Ensuring stable operation even under high-voltage conditions.
  • Emitter-Base Voltage (VEBO): Allowing for a wide range of biasing configurations.
  • Continuous Collector Current (IC): Suitable for a variety of amplification needs.

Microchip Technology is known for its commitment to quality and reliability, and the 2N2609 is no exception. Each transistor is rigorously tested to ensure it meets the stringent standards set by the company. Whether you're designing a new circuit or replacing a component in an existing one, the 2N2609 is a choice you can trust for consistent performance and longevity.

For engineers and electronics enthusiasts looking for a dependable PNP transistor that combines functionality with durability, the 2N2609 from Microchip Technology is an excellent option to consider.

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