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APT200GN60J

Part No APT200GN60J
Manufacturer Microchip Technology
Catalog IGBTs - Modules
Description IGBT MOD 600V 283A 682W ISOTOP / IGBT Module Trench Field Stop Single 600 V 283 A 682 W Chassis Mount ISOTOP®
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Manufacturer Microchip Technology
Packaging Tube
IGBT Type Trench Field Stop
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 283 A
Power - Max 682 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Current - Collector Cutoff (Max) 25 µA
Input Capacitance (Cies) @ Vce 14.1 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Chassis Mount
Case / Package ISOTOP
Supplier Device Package ISOTOP®
Base Product Number APT200
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number APT200GN60JMI,APT200GN60JMI-ND
Standard Package 1
Win Source Part Number 1324939-APT200GN60J
Ultra Librarian 3D Model Ultra Librarian APT200GN60J CAD Model

Description

The APT200GN60J is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. This high-performance IGBT is designed to meet the demanding needs of a wide range of power electronics applications, including motor drives, uninterruptible power supplies (UPS), inverters, and more.

Key Features

  • High Voltage Capability: The APT200GN60J is capable of handling high voltages, with a collector-emitter voltage (Vce) rating of 600V, making it suitable for high-power applications.
  • Low On-Resistance: This IGBT boasts a low on-resistance, ensuring high efficiency and lower conduction losses in power conversion systems.
  • High Current Rating: With a continuous collector current (Ic) rating of 200A at 25°C, this device can manage significant current levels, contributing to its robust performance in high-power applications.
  • Fast Switching Speed: The APT200GN60J offers fast switching speeds, which is critical for reducing switching losses and improving the overall efficiency of power electronic systems.
  • Robust Thermal Performance: The IGBT is designed with an optimal thermal management system, featuring a maximum junction temperature (Tj) of 150°C, which helps in maintaining performance even under high temperature operating conditions.

Applications

The versatility of the APT200GN60J makes it an ideal choice for various high-power applications, including:

  • Industrial Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Solar Power Inverters
  • Electric Vehicle (EV) Charging Systems
  • Induction Heating Systems

Quality and Reliability

Microchip Technology is committed to providing products that meet the highest standards of quality and reliability. The APT200GN60J IGBT is no exception, with its robust design and thorough testing ensuring dependable performance in the most challenging environments.

Conclusion

With its combination of high voltage and current capabilities, low on-resistance, fast switching speeds, and excellent thermal performance, the APT200GN60J from Microchip Technology stands out as a top-tier component for power electronics engineers looking to enhance the efficiency and reliability of their applications.

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