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JAN2N930

Part No JAN2N930
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS NPN 45V 0.03A TO18  /  Bipolar (BJT) Transistor NPN 45 V 30 mA 300 mW Through Hole TO-18
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/253
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 30 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 1V @ 500µA, 10mA
Current - Collector Cutoff (Max) 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10µA, 5V
Power - Max 300 mW
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Base Product Number 2N930
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1086-2369,1086-2369-MIL
Standard Package 1
Win Source Part Number 1023967-JAN2N930
Ultra Librarian 3D Model Ultra Librarian JAN2N930 CAD Model

Description

Product Overview: JAN2N930 from Microchip Technology

The JAN2N930 is a high-quality, reliable transistor product from Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This product is designed to meet the stringent requirements of various applications, particularly in the aerospace and defense sectors where performance and durability are of utmost importance.

Key Features

  • High Reliability: The JAN2N930 transistor is built to Joint Army/Navy (JAN) specifications, ensuring its reliability and suitability for mission-critical applications.
  • Durable Construction: Made with robust materials, this transistor can withstand harsh environments, including high temperatures and radiation levels.
  • Low Noise Performance: With its low noise characteristics, the JAN2N930 is ideal for sensitive electronic circuits, providing a stable and clean signal.
  • Versatile Application: This transistor can be used in a wide range of electronic circuits, including amplifiers, oscillators, and switching devices.

Technical Specifications

The JAN2N930 transistor features a silicon NPN material and comes in a TO-18 metal can package, which is known for its durability and thermal performance. It has a collector-emitter voltage (Vceo) of 45V, a collector-base voltage (Vcbo) of 60V, and an emitter-base voltage (Vebo) of 6.0V. The collector current (Ic) is rated at 50mA, which is suitable for a variety of low-power applications.

Quality and Certification

Microchip Technology is committed to the highest standards of quality. The JAN2N930 transistor is manufactured in facilities that are certified to aerospace standards, ensuring that each component meets rigorous quality control measures. Additionally, the product comes with the assurance of Microchip's support and service, which includes technical assistance and a robust warranty.

Applications

The JAN2N930 is versatile enough to be used in a variety of applications, including but not limited to:

  • Avionics and onboard systems in aircraft
  • Space exploration equipment and satellites
  • Military communication devices
  • Precision instrumentation and control systems

With its proven track record, the JAN2N930 from Microchip Technology remains a preferred choice for professionals looking for a reliable transistor that can perform under the most demanding conditions.

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