2SC3502-E NPN Transistor from ON Semiconductor

The 2SC3502-E is a high-quality NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor, a leader in the semiconductor industry. This device is designed for use in power amplification and switching applications and is well-suited for a variety of electronic circuits.

Key Features:

• Voltage Ratings: The 2SC3502-E boasts a collector-base voltage (VCBO) of 300V, collector-emitter voltage (VCEO) of 300V, and emitter-base voltage (VEBO) of 5V. These ratings ensure the transistor can handle high voltage applications with ease.
• Current Capacity: With a continuous collector current (IC) of 100mA, this transistor can drive moderate loads in electronic circuits, making it versatile for various applications.
• Power Dissipation: The device has a power dissipation (PC) of 900mW, allowing it to dissipate heat effectively during operation and maintain stability.
• High Gain Bandwidth Product: Featuring a transition frequency (fT) of 120MHz, the 2SC3502-E is capable of high-frequency operation, which is ideal for amplification in RF and other high-speed signal processing applications.
• Package: It comes in a TO-126 package, which is known for its compact size and ability to handle decent power levels while providing good thermal performance.

Applications:

The 2SC3502-E transistor is suitable for a wide range of applications, including:

• Audio power amplifiers
• Switching power supplies
• Driver stages in high-fidelity amplifiers
• Signal processing circuits
• Other general-purpose applications requiring high voltage and moderate current

Quality and Reliability:

ON Semiconductor is committed to providing high-reliability components. The 2SC3502-E is built to meet stringent quality standards, ensuring consistent performance and durability for the end-user. Whether you are designing consumer electronics or industrial systems, the 2SC3502-E from ON Semiconductor is a reliable choice for your NPN transistor needs.