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MSC080SMA120B4

Part No MSC080SMA120B4
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 37A TO247-4
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202700-MSC080SMA120B4
Manufacturer Microchip Technology
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Ultra Librarian 3D Model Ultra Librarian MSC080SMA120B4 CAD Model

Description

Microchip Technology MSC080SMA120B4 Silicon Carbide Power Module

The MSC080SMA120B4 is a state-of-the-art silicon carbide (SiC) power module from Microchip Technology, designed to deliver high efficiency, reliability, and performance for a wide range of power applications. This power module is a perfect choice for engineers looking to enhance system performance in high-power systems such as electric vehicles, solar inverters, and industrial motor drives.

With its advanced SiC technology, the MSC080SMA120B4 offers superior thermal performance and reduced switching losses compared to traditional silicon-based modules. The module features a 1200V blocking voltage capability, which ensures safe operation under high voltage conditions and reduces the risk of voltage spikes damaging the system.

The MSC080SMA120B4 comes in a robust package that is designed to withstand harsh environments and provides excellent thermal conductivity. It has a low inductance design, which minimizes switching losses and improves the overall efficiency of the power system. The module's high-speed switching capabilities enable compact and efficient designs, reducing the size of passive components and overall system cost.

Key features of the MSC080SMA120B4 include:

  • 1200V Blocking Voltage: High voltage capability for safe operation in high-power applications.
  • Low Inductance Design: Minimizes switching losses and enhances efficiency.
  • High-Speed Switching: Enables smaller passive components and reduces system size and cost.
  • SiC Technology: Offers improved thermal performance, efficiency, and reliability.
  • Durable Construction: Engineered to perform reliably in demanding conditions.

The MSC080SMA120B4 is a testament to Microchip Technology's commitment to providing advanced solutions that meet the evolving needs of power electronics. This SiC power module is an ideal choice for designers looking to leverage the benefits of silicon carbide in their high-performance applications, ensuring that they stay ahead of the curve in power conversion technology.

For detailed specifications, application notes, and additional resources, visit Microchip Technology's official website or contact their customer support for personalized assistance in integrating the MSC080SMA120B4 into your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $16.7340 $50.2020
8+ $13.7304 $109.8432
12+ $13.3014 $159.6168
16+ $12.8723 $205.9568
21+ $12.4432 $261.3072
27+ $11.1560 $301.2120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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