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MSCSM70AM19CT1AG

Part No MSCSM70AM19CT1AG
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description PM-MOSFET-SIC-SBD~-SP1F / Mosfet Array 2 N Channel (Phase Leg) 700V 124A (Tc) 365W (Tc) Chassis Mount SP1F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Microchip Technology
Packaging Tube
FET Type 2 N Channel (Phase Leg)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 124A (Tc)
Rds On (Max) @ Id, Vgs 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 700V
Power - Max 365W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Chassis Mount
Case / Package Module
Supplier Device Package SP1F
Base Product Number MSCSM70
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 150-MSCSM70AM19CT1AG
Standard Package 1
Win Source Part Number 1324628-MSCSM70AM19CT1AG
Ultra Librarian 3D Model Ultra Librarian MSCSM70AM19CT1AG CAD Model

Description

The MSCSM70AM19CT1AG is a state-of-the-art silicon carbide (SiC) MOSFET module, designed and manufactured by Microchip Technology, a leading provider in the semiconductor industry. This power module is engineered to deliver high efficiency, reliability, and performance for a wide range of applications, including electric vehicles, solar inverters, and high-performance power systems.

Key Features

  • High-Efficiency SiC MOSFETs: The module incorporates advanced silicon carbide technology, which offers superior switching performance and higher efficiency compared to traditional silicon devices.
  • High-Temperature Operation: Capable of operating at high temperatures, the MSCSM70AM19CT1AG ensures consistent performance even under extreme conditions, making it ideal for demanding applications.
  • Low RDS(on): This module features a low on-resistance, reducing conduction losses and improving overall system efficiency.
  • Robust Package Design: The MSCSM70AM19CT1AG is housed in a rugged package that ensures durability and long-term reliability.

Applications

The versatility of the MSCSM70AM19CT1AG allows it to be utilized in a variety of applications where efficient power conversion is critical. Its primary uses include:

  • Electric vehicle (EV) powertrains
  • Renewable energy systems, such as solar inverters and wind turbines
  • Uninterruptible power supplies (UPS)
  • High-performance power supplies and converters

Technical Specifications

Parameter Value Configuration Single Voltage Rating 1,200V Current Rating 70A RDS(on) 19mΩ Package Type Module

In conclusion, the MSCSM70AM19CT1AG from Microchip Technology is a powerful and reliable SiC MOSFET module designed for high-efficiency and high-performance power applications. Its robust design, combined with cutting-edge silicon carbide technology, makes it a top choice for engineers looking to enhance their power systems.

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