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TP2104K1-G

Part No TP2104K1-G
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 0.16A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 60pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1110973-TP2104K1-G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TP2104K1-G CAD Model

Description

Microchip Technology's TP2104K1-G P-Channel MOSFET

Introducing the TP2104K1-G, a high-performance P-Channel MOSFET from the reputed semiconductor manufacturer, Microchip Technology. This MOSFET is designed to provide efficient power management and switching applications. Ideal for a range of electronic devices, the TP2104K1-G offers a balance of low on-resistance and fast switching speed, making it a versatile choice for designers and engineers.

The TP2104K1-G features a compact TO-92 package, which is well-suited for space-constrained applications. Despite its small size, it delivers robust performance with a drain-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -1.4A at 25°C. This makes it an excellent choice for power regulation tasks in portable electronics, where efficiency and battery life are of paramount importance.

One of the key advantages of the TP2104K1-G is its low threshold voltage (V<sub>GS(th)), which allows for operation at lower gate voltages, reducing power consumption and extending battery life in portable applications. Additionally, its low on-resistance (R<sub>DS(on)) minimizes losses and heat generation, contributing to the reliability and longevity of the end product.

The device's fast switching characteristics are beneficial for PWM (Pulse Width Modulation) applications and other scenarios where rapid transitions between on and off states are required. This makes the TP2104K1-G an excellent choice for motor control circuits, LED drivers, and power management systems in consumer electronics.

Moreover, the TP2104K1-G is characterized by its high input impedance, which ensures minimal gate drive losses and further contributes to the overall efficiency of the system. It is also protected against static discharge, enhancing its robustness in sensitive electronic environments.

In summary, the TP2104K1-G P-Channel MOSFET from Microchip Technology is a reliable and efficient solution for a wide variety of power management applications. Its combination of low on-resistance, high switching speed, and compact packaging makes it an attractive option for designers looking to optimize performance while maintaining a small footprint.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official Microchip Technology website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2515 $62.5750
100+ $1.1707 $117.0700
155+ $1.1304 $175.2120
225+ $1.0497 $236.1825
290+ $1.0092 $292.6680
360+ $0.9690 $348.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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