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MT29E3T08EUHBBM4-3:B TR
Same model may have multiple batches, images only for reference.

MT29E3T08EUHBBM4-3:B TR

Part No MT29E3T08EUHBBM4-3:B TR
Manufacturer Micron Technology Inc.
Catalog Flash
Description IC FLASH 3TB PARALLEL 333MHZ  /  FLASH - NAND Memory IC 3Tb (384G x 8) Parallel 333 MHz
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Micron Technology Inc.
Package Tape & Reel (TR)
Product Status Not For New Designs
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 3Tb (384G x 8)
Memory Interface Parallel
Clock Frequency 333 MHz
Voltage - Supply 2.5V ~ 3.6V
Temperature Range - Operating 0°C ~ 70°C (TA)
Base Product Number MT29E3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 1,000
Win Source Part Number 1080788-MT29E3T08EUHBBM4-3:B TR
Ultra Librarian 3D Model Ultra Librarian MT29E3T08EUHBBM4-3:B TR CAD Model

Description

The Micron Technology Inc. MT29E3T01DTADJW-IT is a 3Tb (384G x 8) non-volatile FLASH NAND memory chip with a voltage supply of 2.5V ~ 3.6V.

  • Clock Frequency: 333 MHz
  • Alternative Part: MT29E3T01DTADJW-IT
  • Category: Integrated Circuits (ICs)>Memory
  • Status: not for new designs
  • Manufacturer: Micron Technology Inc. in the open market
  • ECCN: 3A991B1A

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