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MT46V16M16CY-6 AT:K

Part No MT46V16M16CY-6 AT:K
Manufacturer Micron Technology Inc.
Catalog DDR
Description LPDDR-333 16Mx16 FBGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Series *
Win Source Part Number 943455-MT46V16M16CY-6 AT:K
Ultra Librarian 3D Model Ultra Librarian MT46V16M16CY-6 AT:K CAD Model

Description

The MT46V16M16CY-6 AT:K is a Double Data Rate (DDR) SDRAM component manufactured by Micron Technology Inc. This memory chip is designed to provide high bandwidth and low latency for demanding applications in various computing and embedded systems. With a capacity of 16Mb, organized as 1M x 16 bits, it offers a balance between memory density and data access width. The component is designed to operate at a data rate of up to 166 MHz, enabling a bandwidth of up to 333 Mbps.

Applications

  • Graphics cards
  • Networking equipment (routers, switches)
  • Digital signal processing (DSP) applications
  • Embedded systems requiring high-speed memory access
  • Consumer electronics

Features

  • Double data rate (DDR) architecture: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the memory bandwidth.
  • Data rate of up to 166 MHz: Provides a high data transfer rate for demanding applications.
  • 16Mb density: Offers adequate memory capacity for various applications.
  • 1M x 16 organization: Optimizes memory access for 16-bit data operations.
  • Differential clock inputs (CK and /CK): Improves noise immunity and signal integrity.
  • Double data strobe (DQS): Enables precise data capture and timing.
  • On-chip DLL (Delay-Locked Loop): Ensures accurate timing and synchronization for high-speed operation.
  • 8 internal banks: Allows for concurrent operations, enhancing overall performance.
  • Precharge and power-down modes: Reduces power consumption during idle periods.
  • Lead-free construction: Compliant with environmental regulations.

Benefits

  • High bandwidth: The DDR architecture provides significantly higher bandwidth compared to traditional SDRAM, enabling faster data processing.
  • Improved performance: The high data rate and optimized memory organization contribute to improved system performance in demanding applications.
  • Reduced power consumption: Power-down modes help minimize power consumption when the device is not actively being used.
  • Enhanced reliability: Differential clock inputs and on-chip DLL improve signal integrity and timing accuracy, contributing to overall system reliability.
  • Simplified system design: The component's features and specifications simplify the design and integration process for system developers.

Additional Details

The MT46V16M16CY-6 AT:K operates at a voltage of 2.5V. It typically comes in a standard TSOP package. The “-6” designation indicates the speed grade of the memory, specifying its maximum operating frequency and timing parameters. “AT:K” likely refers to a specific testing or manufacturing variation code, denoting specific characteristics or qualifications of the particular batch of memory chips.

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