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Same model may have multiple batches, images only for reference.
APT10035B2FLLG Real Image
Same model may have multiple batches, images only for reference.

APT10035B2FLLG

Part No APT10035B2FLLG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 28A T-MAX / Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) T-MAX Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 186nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5185pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 690W (Tc)
Rds On (Maximum) @ Id, Vgs 370 mOhm @ 14A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 768655-APT10035B2FLLG
Popularity Medium
Supply and Demand Status Limited
Family Name APT10035B2FLLG
Introduction Date March 17, 1997
ECCN EAR99
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian APT10035B2FLLG CAD Model

Description

The Microsemi Corporation APT10035B2FLLG is a MOSFET transistor that is part of the POWER MOS 7 series.

  • Current Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Maximum Power Dissipation (Tc): 690W
  • Packaging: TO-247-3 Variant
  • Temperature Range (TJ): -55°C to 150°C
  • Maximum Drain-Source Voltage: 1000V
  • Maximum Gate-Source Voltage: ±30V
  • Gate Charge (Qg) @ 10V: 186nC
  • Input Capacitance (Ciss) @ 25V: 5185pF
  • Maximum Rds On @ 14A, 10V: 370 mOhm
  • Alternatives: IXFK30N100Q2SN, IXFX30N100Q2, IXFK30N100Q2
  • Popularity: Medium
  • Supply and Demand Status: Limited

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