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Same model may have multiple batches, images only for reference.
APT15GN120BDQ1G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT15GN120BDQ1G

Part No APT15GN120BDQ1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 45A 195W TO247 / Trans IGBT Chip N-CH 1200V 45A 195000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
APT15GN120BDQ1G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 45A
Current - Collector Pulsed (Icm) 45A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 15A
Power - Max 195W
Switching Energy 410μJ (on), 950μJ (off)
Input Type Standard
Gate Charge 90nC
Td (on/off) @ 25°C 10ns/150ns
Test Condition 800V, 15A, 4.3 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
Win Source Part Number 768675-APT15GN120BDQ1G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT15GN120BDQ1
Introduction Date September 03, 2004
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT15GN120BDQ1G CAD Model

Description

The Microsemi Corporation APT15GN120BDQ1G is a trench field stop insulated gate bipolar transistor (IGBT) that belongs to the APT15GN120BDQ1 series.

  • Maximum Power: 195 W
  • Maximum Collector Current: 45 A
  • Maximum Collector-Emitter Breakdown Voltage: 1,200 V
  • Voltage Range: ±30 V
  • Package: TO-247-3
  • Mounting Type: Through-hole
  • Estimated EOL Date: 2027
  • Introduction Date: September 03, 2004
  • Popularity: High

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