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Same model may have multiple batches, images only for reference.
APT25GN120BG Real Image
Same model may have multiple batches, images only for reference.

APT25GN120BG

Part No APT25GN120BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 67A 272W TO247 / Trans IGBT Chip N-CH 1200V 67A 272000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
APT25GN120BG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 67A
Current - Collector Pulsed (Icm) 75A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 25A
Power - Max 272W
Switching Energy 2.15μJ (off)
Input Type Standard
Gate Charge 155nC
Td (on/off) @ 25°C 22ns/280ns
Test Condition 800V, 25A, 1 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
Win Source Part Number 768683-APT25GN120BG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT25GN120B
Introduction Date September 03, 2004
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT25GN120BG CAD Model

Description

The APT25GN120BG is an IGBT transistor manufactured by Microsemi Corporation.

  • Voltage: 1200V
  • Collector Current: 67A
  • Package Type: TO-247-3
  • Mounting: Through Hole
  • Gate Charge: 155nC
  • Td (on/off): 22ns/280ns @ 25°C
  • Alternative Parts: STGW30NC120HD, IRG7PH42UD1MPBF, IRG7PH44K10D-EPBF, RGS80TSX2HRGC11
  • Power Dissipation: 272W

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