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Same model may have multiple batches, images only for reference.
APT30GT60KRG Real Image
Same model may have multiple batches, images only for reference.

APT30GT60KRG

Part No APT30GT60KRG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 64A 250W TO220 / Trans IGBT Chip N-CH 600V 64A 250000mW 3-Pin(3+Tab) TO-220
Datasheet
APT30GT60KRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Thunderbolt IGBT
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 64A
Current - Collector Pulsed (Icm) 110A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 30A
Power - Max 250W
Switching Energy 525μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 145nC
Td (on/off) @ 25°C 12ns/225ns
Test Condition 400V, 30A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220 [K]
Win Source Part Number 768689-APT30GT60KRG
Popularity Medium
Supply and Demand Status Limited
Family Name APT30GT60KRG
Introduction Date May 20, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian APT30GT60KRG CAD Model

Description

The Microsemi Corporation APT30GT60KRG is a powerful NPT (non-punch-through) IGBT (insulated-gate bipolar transistor) designed for use in a variety of electronic applications.

  • Collector Current (Ic): 64A
  • Collector-Emitter Voltage (Vce): 600V
  • Power Dissipation: 250W
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C
  • Gate Charge: 145nC
  • Switching Energy: 525μJ (on), 600μJ (off)
  • Status: Obsolete
  • Supply and Demand: Limited
  • Alternative Parts: APT30GT60KR

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