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APT50GT60BRDQ2G

Part No APT50GT60BRDQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 110A 446W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 110A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 50A
Maximum Power Dissipation 446W
Total Switching Energy(Ets) 995μJ (on), 1070μJ (off)
Input Type Standard
Gate Charge 240nC
Turn-on and Turn-off delay time 14ns/240ns
Testing Conditions 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018074-APT50GT60BRDQ2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT50GT60BRDQ2G CAD Model

Description

The Microsemi Corporation 1018074-APT50GT60BRDQ2G is a high-performance IGBT in TO-247 [B] package.

  • Maximum Collector Current: 110A
  • Collector-Emitter Breakdown Voltage: 600V
  • Gate Charge: 240nC
  • Reverse Recovery Time: 22ns
  • Applications: high-power applications, including motor control, power supplies, and welding equipment
  • Total Switching Energy (On): 995μJ
  • Total Switching Energy (Off): 1070μJ
  • Collector-Emitter Saturation Voltage: 2.5V @ 15V, 50A

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $32.6415 $65.2830
5+ $26.7833 $133.9165
7+ $25.9459 $181.6213
10+ $25.1097 $251.0970
12+ $24.2723 $291.2676
16+ $21.7614 $348.1824
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Availability: 2,151 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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