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Same model may have multiple batches, images only for reference.
APT75GN120B2G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT75GN120B2G

Part No APT75GN120B2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 200A 833W TMAX / Trans IGBT Chip N-CH 1200V 200A 833000mW 3-Pin(3+Tab) T-MAX Tube
Datasheet
APT75GN120B2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 200A
Current - Collector Pulsed (Icm) 225A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 833W
Switching Energy 8045μJ (on), 7640μJ (off)
Input Type Standard
Gate Charge 425nC
Td (on/off) @ 25°C 60ns/620ns
Test Condition 800V, 75A, 1 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3 Variant
Win Source Part Number 768713-APT75GN120B2G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT75GN120B2
Introduction Date September 10, 1996
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT75GN120B2G CAD Model

Description

The APT75GN120B2G is an IGBT from Microsemi Corporation.

  • Collector Current: 200A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Power Rating: 833W
  • Switching Energy: 8045μJ (on), 7640μJ (off)
  • Package: TO-247-3
  • Mounting: Through hole
  • Gate Charge: 425nC
  • Td (on/off) @ 25°C: 60ns/620ns
  • Type: Trench Field Stop
  • Input Type: Standard
  • Alternative Part: IRG7PSH73K10PbF, APT75GN120B2
  • ECCN: EAR99
  • EOL Date: 2027
  • Category: Discrete Semiconductor Products

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