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Same model may have multiple batches, images only for reference.
APT75GN60LDQ3G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT75GN60LDQ3G

Part No APT75GN60LDQ3G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 155A 536W TO264
Datasheet
APT75GN60LDQ3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 155A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 1.85V @ 15V, 75A
Maximum Power Dissipation 536W
Total Switching Energy(Ets) 2500μJ (on), 2140μJ (off)
Input Type Standard
Gate Charge 485nC
Turn-on and Turn-off delay time 47ns/385ns
Testing Conditions 400V, 75A, 1 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-264 [L]
Win Source Part Number 1018115-APT75GN60LDQ3G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT75GN60LDQ3G CAD Model

Description

The Microsemi Corporation 1018115-APT75GN60LDQ3G is a through-hole mounted trench field stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 155A.

  • Collector-Emitter Breakdown Voltage: 600V
  • Current Collector: 155A
  • Gate Charge: 485nC
  • Collector-Emitter Saturation Voltage: 1.85V @ 15V, 75A
  • Total Switching Energy (On): 2500μJ
  • Total Switching Energy (Off): 2140μJ
  • Turn-On Delay Time: 47ns
  • Turn-Off Delay Time: 385ns
  • Operating Temperature Range: -55°C to 175°C

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