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Same model may have multiple batches, images only for reference.
APT84F50B2 Real Image
Same model may have multiple batches, images only for reference.

APT84F50B2

Part No APT84F50B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 340nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 65 mOhm @ 42A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146910-APT84F50B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Family Name APT84F50B2
Introduction Date May 21, 2009
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT84F50B2 CAD Model

Description

The APT84F50B2 is a POWER MOS 8 series N-channel MOSFET manufactured by Microsemi Corporation.

  • Product Name: APT84F50B2
  • Manufacturer: Microsemi Corporation
  • Series: POWER MOS 8
  • Channel Type: N-channel
  • Maximum Power Dissipation: 1135W @ Tc
  • Package: TO-247-3 Variant
  • Mounting Style: Through-Hole
  • Drain-Source Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 340nC @ 10V
  • Rds On: 65 mOhm @ 42A and 10V
  • Drive Voltage: 10V
  • Continuous Drain Current: 84A @ 25°C
  • Application: Discrete Semiconductor Products
  • Operating Temperature: -55°C to 150°C (TJ)

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