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JAN2N3740

Name: JAN2N3740
Brand: Microsemi Corporation
SKU: 165817
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	JAN2N3740
Manufacturer	Microsemi Corporation
Catalog	Transistors (BJT) - Single
Description	TRANS PNP 60V 4A TO-66
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Active
Transistor Polarity	PNP
Maximum Current Collector	4A
VCEO Maximum Collector-Emitter Breakdown Voltage	60V
Max Vce (sat)	600mV @ 125mA, 1A
Collector Cut-off Current(Max)	10μA
Typical Gain (hFE) (Min)	30 @ 250mA, 1V
Maximum Power Dissipation	25W
Temperature Range - Operating	-65°C to 200°C (TJ)
Mounting	Through Hole
Case / Package	TO-66 (TO-213AA)
Win Source Part Number	205724-JAN2N3740
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	1
Ultra Librarian 3D Model	Ultra Librarian JAN2N3740 CAD Model

Alternative Products

Description

The 172997 is a high-performance PNP transistor designed and manufactured by Microsemi Corporation. This transistor comes with a maximum collector current of 4A and a collector-emitter breakdown voltage of 60V, making it a perfect choice for high-current applications.

Maximum power dissipation: 25W.
Operating temperature range: -65°C to 200°C.
Package: TO-66 (TO-213AA).
Commonly used in: various applications such as power supplies, amplifiers, and switching circuits.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$28.8889	$57.7778
5+	$23.7038	$118.5190
7+	$22.9630	$160.7410
9+	$22.2223	$200.0007
12+	$21.4815	$257.7780
16+	$19.2593	$308.1488

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,000 pieces

MOQ: 2 pcs

Order Increment : 1 pcs

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