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Same model may have multiple batches, images only for reference.
JAN2N6762
Same model may have multiple batches, images only for reference.

JAN2N6762

Part No JAN2N6762
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-204AE TO-3
Datasheet
JAN2N6762 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/542
Packaging Bulk
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 4W (Ta), 75W (Tc)
Rds On (Maximum) @ Id, Vgs 1.8 Ohm @ 4.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-204AA (TO-3)
Package TO-204AA, TO-3
Win Source Part Number 762310-JAN2N6762
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name 2N6762
Introduction Date January 13, 2010
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian JAN2N6762 CAD Model

Description

The Microsemi Corporation 2N6762 is a Military, MIL-PRF-19500/542 series MOSFET.

  • Type: N-channel
  • Maximum Drain-Source Voltage: 500V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: - at Vds
  • Power Dissipation: 4W (Ta), 75W (Tc)
  • Maximum Continuous Drain Current: 4.5A (Tc) @ 25°C
  • Maximum Rds On: 1.8 Ohm @ 4.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-204AA, TO-3
  • Mounting: Through-hole

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