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Same model may have multiple batches, images only for reference.
JANTX2N3439UA Real Image
Same model may have multiple batches, images only for reference.

JANTX2N3439UA

Part No JANTX2N3439UA
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 1A UA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 350V
Max Vce (sat) 500mV @ 4mA, 50mA
Collector Cut-off Current(Max) 2μA
Typical Gain (hFE) (Min) 40 @ 20mA, 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting SMD (SMT)
Case / Package UA
Win Source Part Number 138335-JANTX2N3439UA
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JANTX2N3439UA CAD Model

Description

The JANTX2N3439UA is an NPN transistor with a collector-emitter breakdown voltage of 350V and a maximum collector current of 1A.

  • Collector-Emitter Breakdown Voltage: 350V
  • Maximum Collector Current: 1A
  • Typical Gain (hFE): 40 @ 20mA and 10V
  • Maximum Power Dissipation: 800mW
  • Package: UA package
  • Operating Temperature Range: -65°C to 200°C (TJ)

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