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Same model may have multiple batches, images only for reference.
JANTX2N5665 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N5665

Part No JANTX2N5665
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 300V 5A TO-66
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/455
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 300V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 1A, 5A
Current - Collector Cutoff (Maximum) 200nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 1A, 5V
Power - Max 2.5W
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-213AA, TO-66-2
Win Source Part Number 762261-JANTX2N5665
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name 2N5665
Introduction Date April 25, 2001
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian JANTX2N5665 CAD Model

Description

The Microsemi Corporation 2N5665 is a military-grade NPN transistor that is part of the 2N5665 family.

  • Maximum Power: 2.5W
  • Maximum Collector-Emitter Breakdown Voltage: 300V
  • Maximum Collector Current: 5A
  • Mounting: Through-hole
  • Package: TO-213AA, TO-66-2
  • DC Current Gain: 25 @ 1A, 5V
  • Country of Origin: Philippines
  • Estimated EOL Date: 2027
  • Supply Status: Limited
  • Demand: Medium

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