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Same model may have multiple batches, images only for reference.
MS2200
Same model may have multiple batches, images only for reference.

MS2200

Part No MS2200
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 65V 500MHZ M102 / RF Transistor NPN 65V 43.2A 400MHz ~ 500MHz 1167W Chassis Mount M102
Datasheet
MS2200 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 400MHz ~ 500MHz
Gain 9.7dB
Power - Max 1167W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V
Current - Collector (Ic) (Max) 43.2A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package M102
Supplier Device Package M102
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number MS2200-ND,150-MS2200
Standard Package 1
Win Source Part Number 1325034-MS2200
Ultra Librarian 3D Model Ultra Librarian MS2200 CAD Model

Description

The Microsemi Corporation MS2200 is a chassis mount NPN bipolar transistor, which is designed for use in RF applications.

  • Maximum Power Rating: 1167W
  • Maximum Collector-Emitter Breakdown Voltage: 65V
  • Maximum Collector Current: 43.2A
  • Gain: 9.7dB
  • DC Current Gain: 20 @ 5A and 5V
  • Frequency Transition Range: Between 400MHz and 500MHz
  • Device Package: M102
  • Operating Temperature Range: 200°C (TJ)
  • Classification: EAR99
  • Status: Obsolete

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