The 2SC5395-12-E is a silicon NPN bipolar transistor manufactured by Mitsubishi Electric. It's designed for use in high-power amplifier applications, particularly in VHF band transmitters.

Applications

• VHF Power Amplifiers
• VHF Transmitters
• High-frequency Oscillators
• Industrial RF Heating
• Radio Communication Equipment

Features

• NPN Silicon Bipolar Transistor
• High Power Output
• High Gain
• Low Distortion
• High Collector Current Capability

Benefits

• Provides efficient amplification of VHF signals.
• Enables reliable high-power transmission.
• Ensures minimal signal distortion.
• Capable of handling high current demands.
• Suitable for robust industrial applications.

Additional Details

The 2SC5395-12-E is designed to deliver significant power output with low distortion at VHF frequencies. Key parameters include collector-emitter voltage (VCEO), collector current (IC), power dissipation (PC), power gain (GP), and operating frequency range. Consult the Mitsubishi datasheet for precise specifications and operating conditions. The '-12' likely signifies a particular voltage or gain characteristic. The '-E' suffix often relates to a specific lot or manufacturing variation. It typically comes in a flange-mount package (e.g., TO-247 or similar) for effective heat dissipation due to the high power levels involved. It's designed for use in demanding high-power VHF applications.